Semiconductor Device Having a Source Region with Chalcogen Atoms

ABSTRACT

Some embodiments relate to a semiconductor device that includes a body region of a field effect transistor structure formed in a semiconductor substrate between a drift region of the field effect transistor structure and a source region of the field effect transistor structure. The semiconductor substrate includes chalcogen atoms at an atom concentration of less than 1×10 13  cm −3  at a p-n junction between the body region and the drift region, and at least part of the source region includes chalcogen atoms at an atom concentration of greater than 1×10 14  cm −3 . Additional semiconductor device embodiments and corresponding methods of manufacture are described.

TECHNICAL FIELD

Embodiments relate to concepts for transistor structures and inparticular to semiconductor devices and a method for forming asemiconductor device.

BACKGROUND

It is desired to improve the latch-up, over-current and cosmic radiationrobustness of semiconductor devices, as semiconductor devices, such asfield effect transistors, e.g. insulated gate bipolar transistors (IGBT)may suffer from challenges related to latch-up, over-current and cosmicradiation.

SUMMARY

Some embodiments relate to a method for forming a semiconductor device.The method includes forming a source region of a field effect transistorstructure in a semiconductor substrate. The method further includesforming an oxide layer. The method further includes incorporating atomsof at least one atom type of a group of atom types into at least a partof the source region of the field effect transistor structure afterforming the oxide layer. The group of atom types includes chalcogenatoms, silicon atoms and argon atoms.

Some embodiments relate to a semiconductor device. The semiconductordevice includes a body region of a field effect transistor structureformed between a drift region of the field effect transistor structureand a source region of the field effect transistor structure. Thesemiconductor substrate includes chalcogen atoms at an atomconcentration of less than 1×10¹³ cm⁻³ at a p-n junction between thebody region and the drift region. At least part of the source regionincludes the chalcogen atoms at an atom concentration of greater than1×10¹³ cm⁻³.

Some embodiments relate to a further semiconductor device. Thesemiconductor device includes a body region of a field effect transistorstructure formed in a semiconductor substrate and a source region formedadjacent to the body region. At least part of the source region includeschalcogen atoms at an atom concentration of greater than 1×10¹³ cm⁻³.The semiconductor device further includes a contact trench extendinginto the semiconductor substrate. The semiconductor device furtherincludes an electrode structure formed in the contact trench. Theelectrode structure is in contact with the body region at the bottom ofthe contact trench and in contact with the source region at a sidewallof the contact trench.

Those skilled in the art will recognize additional features andadvantages upon reading the following detailed description, and uponviewing the accompanying drawings.

BRIEF DESCRIPTION OF THE FIGURES

Some embodiments of apparatuses and/or methods will be described in thefollowing by way of example only, and with reference to the accompanyingfigures, in which

FIG. 1A shows a flow chart of a method for forming a semiconductordevice according to various embodiments;

FIG. 1B shows a schematic illustration of at least part of a method forforming a semiconductor device according to various embodiments;

FIG. 2 shows a schematic illustration of a semiconductor deviceaccording to various embodiments;

FIG. 3 shows a schematic illustration of a semiconductor device with acontact trench according to various embodiments;

FIG. 4 shows a plot of injection electron current with respect to sourceregion doping concentration.

DETAILED DESCRIPTION

Various example embodiments will now be described more fully withreference to the accompanying drawings in which some example embodimentsare illustrated. In the figures, the thicknesses of lines, layers and/orregions may be exaggerated for clarity.

Accordingly, while example embodiments are capable of variousmodifications and alternative forms, embodiments thereof are shown byway of example in the figures and will herein be described in detail. Itshould be understood, however, that there is no intent to limit exampleembodiments to the particular forms disclosed, but on the contrary,example embodiments are to cover all modifications, equivalents, andalternatives falling within the scope of the disclosure. Like numbersrefer to like or similar elements throughout the description of thefigures.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.).

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments belong. Itwill be further understood that terms, e.g., those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art.However, should the present disclosure give a specific meaning to a termdeviating from a meaning commonly understood by one of ordinary skill,this meaning is to be taken into account in the specific context thisdefinition is given herein.

FIG. 1A shows a flow chart of a method 100 for forming a semiconductordevice according to an embodiment.

The method 100 includes forming 110 a source region of a field effecttransistor structure in a semiconductor substrate.

The method 100 further includes forming 120 an oxide layer.

The method 100 further includes incorporating 130 atoms of at least oneatom type of a group of atom types into at least a part of the sourceregion of the field effect transistor structure after forming the oxidelayer. The group of atom types includes chalcogen atoms, silicon atomsand argon atoms.

Due to the incorporation of atoms (of the at least one atom type fromthe group of atom types) into the source region after forming the oxidelayer, latch-up robustness and blocking capabilities of the field effecttransistor structure may be improved. For example, the incorporation ofatoms after forming the oxide layer allows for the atoms to avoid hightemperature (greater than 900° C.) processes associated with theformation of the oxide layer, and therefore the number of atomsspreading deeply into the semiconductor substrate, e.g. into a driftzone, may be reduced.

The source region of the FET structure may be formed 110 byincorporating dopant atoms of a first dopant type into a region of thesemiconductor substrate before forming the oxide layer, for example. Thedopant atoms of the first dopant type may be incorporated byimplantation e.g. ion implantation and/or diffusion of atoms from atleast part of a (front main) surface of the semiconductor substrate, forexample.

Dopant atoms may be either donor atoms (forming n-type regions whenincorporated in a semiconductor substrate) or acceptor atoms (leadingp-type regions when incorporated in the semiconductor substrate), forexample. Dopant atoms of the first dopant type may refer to donor atomsand dopant atoms of a second dopant type may refer to acceptor atoms inthe examples described herein, for example.

The dopant atoms of the first dopant type (donors) may be incorporatedinto the source region so that a source region of a first conductivitytype (e.g. n-type) is formed in the semiconductor substrate, forexample. The dopant atoms of the first dopant type may include elements(or atoms) from group V of the periodic table, e.g. phosphorus (P)and/or Arsenic (As), for example.

The oxide layer, (e.g. an intermediate oxide layer) may be a silicateglass (SG), a phosphosilicate glass (PSG) layer, a borosilicate glass(BSG) layer or a phosphoborosilicate glass (PBSG) layer or a stack ofsuch layers, for example.

The oxide layer may be formed on a surface of the source region, e.g. onat least part of the source region, for example. Furthermore, the oxidelayer may be formed over or below other parts of the FET structure, e.g.over a gate electrode structure and/or other metallization layers formedat a front main surface of the semiconductor substrate, for example.

The method 100 may further include tempering the oxide layer at atemperature of more than 900° C. before incorporating the atoms of theat least one atom type, for example. In this way, edges or uneventopology of the oxide layer due to the topology of the structures belowthe oxide layer may be smoothed.

After forming the oxide layer, the atoms of the at least one atom typemay be incorporated into the source region by implanting the atoms intothe source region. Optionally, the atoms may be implanted at an obliqueimplantation angle (e.g. between 1° and 70° or between 2° and 50° orbetween 5° and 30°), with respect to a main surface of the semiconductorsubstrate. For example, the atoms of the at least one atom type may beimplanted into sidewalls of the contact trench by using a tiltedimplant.

More than 50% (e.g. more than 75% or e.g. more than 90%) of theincorporated atoms (of the at least one atom type) may be incorporatedinto a surface region of the source region. For example, the surfaceregion may have a thickness of less than 150 nm, e.g. between 10 nm to120 nm, e.g. 100 nm. In other words, the surface region may extend intothe source region from the surface of entry of the atoms by less than150 nm, e.g. between 10 nm to 120 nm, e.g. 100 nm.

The atom types in the group of atom types include chalcogen atoms suchas sulfur (S), selenium (Se) and tellurium (Te). Other atom types in thegroup of atom types include silicon (Si) atoms and argon (Ar) atoms. Theatom types in the group of atom types are atoms which exhibit mainlyelectrically inactive behavior when incorporated into the (silicon)semiconductor substrate, e.g. by forming mainly electrically inactiveclusters or defects in the silicon lattice. Mainly electrically inactivein this context means that these atoms are less effective as donors butare effective as defects with deep energy levels in the band gap of thesemiconductor so that they can avoid a significant contact resistancedue to Schottky effects.

For example, the semiconductor substrate may be a silicon-basedsemiconductor substrate. In other examples, the semiconductor substratemay be a silicon carbide-based semiconductor substrate, or galliumarsenide-based semiconductor substrate or gallium nitride-basedsemiconductor substrate, for example.

The semiconductor substrate may include a semiconductor substrate frontside and a semiconductor substrate back side. In comparison to abasically vertical edge of the semiconductor substrate, the main surfaceor front side of the semiconductor substrate may be a basicallyhorizontal surface extending laterally.

The main surface of a substrate may be a substantially even plane (e.g.neglecting unevenness of the semiconductor structure due to themanufacturing process and trenches). For example, the lateral dimensionof the main surface of the substrate may be more than 100 times larger(or more than 1000 times or more than 10000 times) than a maximal heightof structures on the main surface.

The FET structure may be a metal oxide semiconductor field effecttransistor (MOSFET) or an insulated gate bipolar transistor (IGBT), forexample. For example, the semiconductor device may be a powersemiconductor device with a blocking voltage which lies between 600 Vand 8000V (e.g. more than 700 V, more than 1000V or more than 1500V). Insome examples, the semiconductor device may have on-state currentcarrying capability which is greater than 10 A, greater than 500 A orgreater than 1000 A, for example. In other examples, the semiconductordevice may be power device having a blocking voltage of between 500V to900 V, (e.g. a CoolMOS™ device), for example.

Alternatively or optionally, the method 100 may include etching acontact trench into the semiconductor substrate before incorporating theatoms of the at least one atom type. For example, the etching of thesemiconductor substrate may include etching (e.g. removing) a portion ofa source region formed in the semiconductor substrate. The etching ofthe semiconductor substrate may also include etching a portion of a bodyregion formed in the semiconductor substrate, for example. At least partof the source region and at least part of the body region remains in thesemiconductor substrate after etching.

For example, the etching (or removal) of the portion of the sourceregion of the semiconductor substrate may leave at least part of theremaining source region and the body region exposed. The exposed sourceregion may be a surface of entry of the atoms during the incorporationof the atoms into the source region, for example.

The etching of the contact trench may result in a portion of the sourceregion being etched, and the remaining parts of the source region in thesemiconductor substrate defining the at least part of the sidewalls ofthe contact trench. For example, the contact trench may include at leastone sidewall of the source region at a side of the contact trench. Theetching of the source region and/or the body region may expose the bodyregion at a bottom of the contact trench. The etching of thesemiconductor substrate may result in a surface of the source regionforming at least a part of a sidewall of the contact trench and asurface of the body region of the semiconductor substrate forming atleast a part of a bottom of the etched contact trench.

Additionally or optionally, the method 100 may also include etching atleast part of the oxide layer before etching the semiconductor substrateto from the contact trench. The etching of the oxide layer may becarried out followed by etching of the source region to form the contacttrench.

For example, the method 100 may further include forming the body regionof the FET structure in the semiconductor substrate, (e.g. beforeincorporating the atoms of the at least one atom type). For example, thebody region may be formed before forming the source region of the FETstructure, for example. The body region of the FET structure may beformed by incorporating dopant atoms of a second dopant type into aregion of the semiconductor substrate before forming the oxide layer.The dopant atoms of the second dopant type may be incorporated byimplantation (e.g. ion implantation) and/or diffusion of atoms from atleast part of a (front main) surface of the semiconductor substrate. Theconcentration of the body region may lie between 5×10¹⁶ cm⁻³ and 1×10¹⁸cm⁻³, (e.g. about 2×10¹⁷ cm⁻³).

The dopant atoms of the second dopant type (acceptors) may beincorporated into the body region so that a body region of a secondconductivity type (e.g. p-type) is formed in the semiconductorsubstrate. The dopant atoms of the second dopant type may includeelements (or atoms) from group III of the periodic table, e.g. boron (B)and/or aluminum (Al), for example. Additionally, optionally oralternatively, also other dopant atoms of the second dopant type may beused for semiconductor substrates as gallium nitride (GaN), for example.

The source region formed in the semiconductor substrate may be formedadjacent to the body region. For example, the source region (beforeetching and before incorporating the atoms of the at least one atomtype) may lie above the body region (e.g. closer to the front mainsurface of the semiconductor substrate than the body region) in thesemiconductor substrate.

Additionally, alternatively or optionally, the method 100 may furtherinclude removing a part of the body region comprising (unwanted) atomsof the at least one atom type from the bottom of the contact trench. Forexample, this may be carried out by etching at least part of the bodyregion at the bottom of the contact trench after incorporating the atomsof the at least one atom type. Additionally, alternatively oroptionally, further dopant atoms of the second dopant type may beincorporated into the body region at the bottom of the contact trenchafter incorporating the atoms of the at least one atom type. With asuitable front design, method 100 may also omit the additional localincrease in the body doping, which may lead to a reduction of latch-up,for example.

Additionally, alternatively or optionally, the method 100 may furtherinclude forming other parts of the FET structure such as a drift region,a float region, a field stop region and/or an emitter region in thesemiconductor substrate, and an insulation structure, gate electrode, asource electrode and a drain electrode at the semiconductor substrate.Some of these processes, e.g. forming the float region, the insulationstructure and the gate electrode layer may be carried out beforeincorporating the atoms of the at least one atom type. Some of theseprocesses, e.g. forming the drift region, the field stop region, theemitter region and the drain electrode may be carried out before orafter incorporating the atoms of the at least one atom type. The floatregion may be formed before formation of the source region, for example.

For example, all processes after incorporating the atoms of the at leastone atom type are performed at temperatures below 800° C. or below 700°C., which may reduce or prevent spreading of the incorporated atoms ofthe at least one type into other regions of the semiconductor device.

Alternatively or optionally, forming the drift region of the FETstructure may include forming a lightly doped region of the firstconductivity type (e.g. n) or the semiconductor substrate may beprovided with a doping concentration suitable for the drift region. Thedrift region may surround or be adjacent to at least part of the bodyregion. For example, the body region may lie above the drift region. Thedrift region may lie between the body region and a back main surface ofthe semiconductor substrate, for example. For example, the drift regionmay lie between the body region and a drain electrode of the FETstructure.

Alternatively or optionally, forming the emitter region may includeforming the emitter region between the drift region and the drainelectrode formed at the back side of the semiconductor substrate, forexample. The emitter region may include a doped region of the secondconductivity type (e.g. p⁺) formed at the back side surface of thesemiconductor substrate.

Alternatively or optionally, the method 100 may include forming a drainelectrode (or a back side metallization layer) on or adjacent to theemitter region at the back surface of the semiconductor substrate.

Furthermore, the method 100 may further include forming an electrodestructure (e.g. a source electrode) at the front surface of thesemiconductor substrate. For example, the source electrode structure maybe formed adjacent to and in contact with the source region and the bodyregion. Optionally, the source electrode structure may be formed over atleast part of the oxide layer or between the oxide layer and thesemiconductor substrate, for example.

The method 100 may further include forming a gate trench in thesemiconductor substrate. The gate trench may be formed adjacent to thesource region and the body region in the semiconductor substrate, forexample. For example, the gate trench may extend into the semiconductorsubstrate from a front main surface of the semiconductor substrate sothat the gate trench is adjacent to the drift region and the floatregion.

The method 100 may further include or further includes forming a gateinsulation layer on the surfaces of the gate trench. The gate insulationlayer may include an electrically insulating material, e.g. silicondioxide or silicon nitride.

The method 100 may further include forming a gate electrode structure on(e.g. covering) the gate insulation layer. For example, at least part ofthe gate electrode structure may be formed in the gate trench, so thatthe gate insulation layer is located between the gate electrode and thesemiconductor substrate.

The method 100 may further include forming a float region in thesemiconductor substrate, e.g. before incorporating the atoms of the atleast one atom type). The float region may comprise a doped region ofthe second conductivity type (e.g. p-type). The float region may beformed adjacent to the gate trench opposite to the body region. At leastpart of the float region may be formed at the front main surface of thesemiconductor substrate. The float region may extend from the main frontsurface to a depth deeper than the body region and/or an adjacent gatetrench.

The method 100 may further include forming an insulation structure on orat least partially in the semiconductor substrate. For example, theinsulation structure may be formed adjacent to and/or at least partiallyin the float region of the semiconductor substrate. In a non-limitingexample, the insulation structure may be formed by a local oxidation ofsilicon (LOCOS) process, or by a thermal oxidation of the siliconsubstrate.

A further part of the gate electrode structure may also be formed on atleast part of the semiconductor substrate, e.g. directly on theinsulation structure.

The method may improve a latch-up robustness of power semiconductorsthrough incorporation of atoms of the at least one atom type (e.g. ofmainly electrically inactive atoms e.g. selenium incorporation) inaddition to the source-diffusion (of mainly electrically active dopantatoms, e.g. P, As). Due to the incorporation of atoms of the at leastone atom type after formation of the oxide layer, the spreading of atoms(e.g. selenium atoms) deep into the drift zone due to the relativelyhigh diffusions constant in silicon at high reflowing temperatures (e.g.at temperatures of at least 900° C.) may be prevented or reduced. Theatoms (e.g. the selenium atoms) may segregate and remain in the surfaceregion of the source region instead. Incorporating the atoms of the atleast one atom type (e.g. the additional selenium implantation in thesemiconductor surface) with IGBT Power MOS processes at significanttemperature processes (e.g. reflowing of the intermediate oxide layer attemperatures of at least 900° C.), may result in undesired deepdiffusion or spreading of the atoms into the drift zone, and maynegatively influence the blocking capabilities of the component sincethe maximum field strength may be significantly increased for a givenblocking voltage. These challenges may be circumvented by the describedconcept, for example.

Furthermore, subsequent high process temperature processes after theimplantation may be carried out at temperatures below 800° C. Forexamples, temperature processes related to stuffed barriers or rapidthermal annealing processes (e.g. at 740° C. for 30 s), may lead to nosignificant redistribution of the atoms (from the 100 nm surface region)due to the segregations effect of the selenium atoms. Therefore, a lowcontact resistance may be experienced even at low source doping, forexample. The emitter efficiency of the selenium doping may be kept verylow due to the segregations effect in combination with the lowsolubility and the low-lying energy levels, for example.

For example, the atoms of the at least one atom type are selenium atoms.Alternatively or additionally, the atoms may be other chalcogen atoms.Alternatively or additionally, sulfur atoms may be introduced in thecontact holes. Additionally or alternatively, the contact hole sidewalls may be implanted with effective donors or electrically inactiveatoms (e.g. Si, Ar). However, these may not necessarily have thesegregations behavior of the selenium atoms, so in this case only arelatively low temperature and/or time budget for the annealing processmay be allowed, for example.

The source electrode and/or the gate electrode may be formed withelectrically conductive materials, e.g. aluminum (Al), titanium (Ti),titanium-tungsten (TiW), titanium nitride (TiN), tantalum nitride (TaN)or tungsten (W) may serve as front side metallization. For example, Al,Ti and/or TiW may serve as a first barrier layer, for example.Combinations of these materials may be used in addition to oralternatively to combinations with deposited power metallizations suchas copper (Cu), nickel (Ni), chromium (Cr) and/or Silicides such asnickel silicide (NiSi) and/or platinum silicide (PtSi), for example.

FIG. 1B shows a schematic illustration 150 of at least part of a methodfor forming a semiconductor device according to an embodiment.

FIG. 1B shows a source region 105 of a field effect transistor structureformed in a semiconductor substrate. FIG. 1B further shows thesemiconductor device may also include a float region 108 (e.g. a p floatregion) in the semiconductor substrate, e.g. a doped region of thesecond conductivity type (e.g. p-type).

FIG. 1B further shows an insulation structure (e.g. a LOCOS region) 109formed on or at least partially in the semiconductor substrate, and agate insulation layer 122 formed on the surface of a gate trench 123extending into the semiconductor substrate. A gate electrode structure124 may be formed on the insulation structure 109 and the gateinsulation layer 122, and at least part of the gate electrode structure124 may be formed in the gate trench 123. The gate trench may be formedadjacent to the float region 108, the source region 105, the body region101 (e.g. a p body region), and the drift region 104.

FIG. 1B further shows an oxide layer 107 (e.g. an intermediate oxidelayer) formed on the gate electrode structure 124 and on the sourceregion 105.

FIG. 1B shows the introduction or incorporation 130 of atoms of thefirst atom type (e.g. Se atoms) in the side walls of a contact trench111 of the FET structure (e.g. an IGBT cell), after forming the oxidelayer 107.

Through the introduction of atoms of the at least one atom type (e.g. Seatoms) in the sidewalls of the contact trench (after forming the oxidelayer), the temperature stress or load following the implantation may besignificantly reduced. Thus, an unwanted in-diffusion of atoms of thefirst atom type (e.g. Se atoms) into the drift zone of the powersemiconductor component may be avoided or reduced. The atoms of thefirst atom type may be incorporated at an oblique implantation angle(shown by the arrows) between 1° and 70°, e.g. between 2° and 50°, e.g.about 45° with respect to the (horizontal) main surface of thesemiconductor substrate.

Implantation doses for the atoms of the at least one atom type (e.g. Seatoms) may lie above 5×10¹³ atoms per cm², e.g. in the range between5×10¹³ and 4×10¹⁵ atoms per cm², or better between 1×10¹⁴ and 8×10¹⁴atoms per cm² for example. The applied implantations energy may liebetween 5 keV and 100 keV, e.g. between 10 keV and 70 keV.

The source region 105 may further include electrically active atoms of afirst dopant type (e.g. P, As) at a doping concentration of less than1×10¹⁸ cm⁻³, e.g. between 5×10¹⁷ cm⁻³ and 1×10¹⁹ cm⁻³. A ratio of thedoping concentration of the atoms of the at least one atom type in thesource region to the doping concentration of electrically active atomsof the first dopant type in the source region lies between 1:10 and 1:2(e.g. between 10% and 50%), for example.

The body region 101 may include dopant atoms of a second dopant type(e.g. B, Al) at a doping concentration of 1×10¹⁷ cm⁻³.

The source region 105 may include an effective doping concentration(e.g. at the surface region or average over the source region) of notmore than three times greater than an effective doping concentration(e.g. average effective doping concentration) of the body region 101.For example, the electrically active effective doping concentration|N_(D)−N_(A)| of the source region may be lower than, approximatelyequal to or preferably not more than a factor of 3 times higher than thedoping concentration of the adjacent body region, e.g. less than 80%higher, or e.g. less than 30% higher. For example, the effective dopingconcentration may lie between 1×10¹⁶ and 2×10¹⁸ cm⁻³ or between 5×10¹⁶and 5×10¹⁷ cm⁻³, for example.

The introduction of selenium atoms in the sidewalls of the contact holesmay be carried out e.g. through angular (oblique) implantation orthrough plasma deposition. Selenium atoms implanted in the trench floormay be removed through an anisotropic etching, or with a high dosageacceptor implantation and/or acceptor implantation over doping with oneor more appropriate implantations energy. Through lateral angling and/orlateral under diffusion, the additional acceptor implantation (of thebody region) may further weaken the emitter efficiency of the seleniumdoped regions. The activation of the implantation may be achieved byrelatively low temperatures (e.g. under 600° C.) or through rapidthermal annealing, to avoid a substantial redistribution of theimplanted selenium atoms.

The electric active effective (e.g. overall net) doping concentration(e.g. an average or maximal doping concentration) |N_(D)−N_(A)| of theatoms used for source region (e.g. P and/or As) may lie in the region ofthe doping concentration (e.g. an average or maximal dopingconcentration) of the adjacent body region (e.g. about 1×10¹⁷ cm⁻³).N_(D) may represent a concentration of donor atoms and N_(A) mayrepresent a concentration of acceptor atoms, for example. For example,the electrically active effective doping concentration of the sourceregion may be lower than (e.g. about 8×10¹⁶ cm⁻³), approximately equalto or preferably not more than a factor of 3 times higher than thedoping concentration of the adjacent body region, e.g. less than 80%higher, or e.g. less than 30% higher. On one hand, the emitterefficiency of the source region may be relatively low and on the otherhand the source region in the conducting state may have a voltage dropwhich is significantly lower than the voltage drop in the drift region.Further, a tendency to current filamentation may be reduced by anincreased voltage drop in the source region, because this additionalvoltage drop may counteract current filamentation.

Defects on the front side of the semiconductor surface may lead to apoor local contact which may lead to a negligible increase in theV_(CEsat). However, critical defects during the p⁺-conductivityenhancement implantation which may lead to a significant degradation ofthe latch-up behavior no longer necessarily play a role due to the localhighly doped p-doped region under the source zone being missing orhaving a lower doping, for example. This may be due to the lower emitterefficiency of the n⁻ source region. The p⁺-conductivity enhancementimplantation (p-body doping increase implant) may be an additionalimplant into the body region to increase the body doping within a partof the body region. The part of the body region with increased dopingmay be located below the source region and with a distance of more than200 nm to the gate trench (e.g. to avoid an alteration of the thresholdof the transistor). The manufacturing cost may be reduced, if thep⁺-conductivity enhancement implantation may be avoided.

A temperature load or stress caused by the annealing of thep⁺-conductivity enhancement implantation may be reduced due to the loweremitter efficiency or the p⁺-conductivity enhancement implantation maybe completely avoided. For example, the temperature stress may bepartially or even fully eliminated if the conductivity enhancementimplantation is not necessary due to the lower source implantationdosage. This may lead to positive side effects for a reverse conductingIGBT. For example, hole injection in the inverse diode may besignificantly reduced.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 2may comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIG. 1A) or below (e.g.FIGS. 2 to 4).

FIG. 2 shows a schematic illustration of a semiconductor device 200according to an embodiment.

The semiconductor device 200 includes a body region 201 of a fieldeffect transistor structure formed between a drift region 204 of thefield effect transistor structure and a source region 205 of the fieldeffect transistor structure. The semiconductor substrate includeschalcogen atoms at an atom concentration of less than 1×10¹³ cm⁻³ at ap-n junction between the body region 201 and the drift region 204. Atleast part of the source region 205 includes the chalcogen atoms at anatom concentration of greater than 1×10¹³ cm⁻³ or greater than 1×10¹⁴cm⁻³ or greater than 1×10¹⁵ cm⁻³ or greater than 1×10¹⁶ cm⁻³ or greaterthan 1×10¹⁷ cm⁻³ or greater than 1×10¹⁸ cm⁻³.

Due to semiconductor substrate having chalcogen atoms at an atomconcentration of less than 1×10¹³ cm⁻³ at the p-n junction 206, blockingcapabilities and robustness against latch-up in the semiconductor devicemay be improved as a very low number of chalcogen atoms are present inthe drift region and in region (e.g. the p-n junction) between the bodyregion and the drift region, for example. As the number of chalcogenatoms present in these areas remains low, the maximum field strengthremains low, thus reducing the effects of avalanche in the semiconductordevice, for example. Due to at least part of the source region havingchalcogen atoms at an atom concentration of greater than 1×10¹³ cm⁻³, noenhancement in the contact resistance (e.g. between a source electrodeand the source region) is experienced even if source doping is reduced.For example, an ohmic contact may be formed between the source electrodeand the source region. Furthermore, the emitter efficiency may be keptvery low and robustness against latch-up may be improved, for example.

The semiconductor device 200 may be similar to the semiconductor deviceformed according to the method described with respect to FIGS. 1A and1B. For example, the semiconductor device 200 may include one or more orall of the features already described with respect to the semiconductordevice of FIG. 1A.

In some examples, an atom concentration of chalcogen atoms (e.g. Seatoms) at a surface region of the source region 205 may be greater than1×10¹³ cm⁻³ or greater than 1×10¹⁴ cm⁻³ or greater than 1×10¹⁵ cm⁻³ orgreater than 1×10¹⁶ cm⁻³ or greater than 1×10¹⁷ cm⁻³ or greater than1×10¹⁸ cm⁻³. The surface region may have a thickness of less than 150nm, e.g. 100 nm, from a surface of the source region 205, for example.

The source region 205 may further include electrically active atoms of afirst dopant type (e.g. P, As) at a doping concentration (e.g. averageor maximal doping concentration) of less than 1×10¹⁸ cm⁻³, e.g. between5×10¹⁷ cm⁻³ and 1×10¹⁹ cm⁻³. A ratio of the doping concentration of thechalcogen atoms in the source region to the doping concentration ofelectrically active atoms of the first dopant type in the source regionlies between 1:10 and 1:2 (e.g. between 10% and 50%), for example.

The body region 201 may include dopant atoms of a second dopant type(e.g. B, Al) at a doping concentration of e.g. 1×10¹⁷ cm⁻³ or severaltimes 10¹⁷ cm⁻³ or more than 1×10¹⁸ cm⁻³.

The source region 205 may include an effective doping concentration(e.g. at the surface region or average over the source region) of notmore than three times greater than an effective doping concentration(e.g. average doping concentration) of the body region 201. For example,the electrically active effective doping concentration |N_(D)−N_(A)| ofthe source region may be lower than, approximately equal to orpreferably not more than a factor of 3 times higher than the effectivedoping concentration of the adjacent body region, e.g. less than 80%higher, or e.g. less than 30% higher. For example, the effective dopingconcentration may lie between 1×10¹⁷ and 5×10¹⁸ cm⁻³, for example.

The semiconductor device 200 may further including an electrodestructure 212 (e.g. a source electrode) forming an ohmic contact withthe source region 205 and/or the body region 201.

Due to the relatively low doping of the source zone with dopant atoms ofthe first dopant type (e.g. with Phosphor and/or Arsenic atoms), a loweremitter efficiency of the n-type source and p-body junction may beachieved. Furthermore, by incorporating atoms of the first atom type(e.g. Se) into the source region, the ohmic contact may be realized atthe low doped source zone, e.g. even though the source region is lowlydoped with dopant atoms. Furthermore, incorporating atoms of the firstatom type (e.g. Se) atoms into the side walls of the contact trench maylead to a plurality of additional levels in the energy gap of thesemiconductor material, which in turn may leads to a very low contactresistance.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 2may comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A and 1B) or below(e.g. FIGS. 3 to 4).

FIG. 3 shows a schematic illustration of a semiconductor device 300according to an embodiment.

The semiconductor device 300 includes a body region 301 of a fieldeffect transistor structure formed in a semiconductor substrate and asource region 305 formed adjacent to the body region 301. At least partof the source region 305 includes chalcogen atoms at an atomconcentration of greater than 1×10¹³ cm⁻³ or greater than 1×10¹⁴ cm⁻³ orgreater than 1×10¹⁵ cm⁻³ or greater than 1×10¹⁶ cm⁻³ or greater than1×10¹⁷ cm⁻³ or greater than 1×10¹⁸ cm⁻³. The semiconductor device 300further includes a contact trench 311 extending into the semiconductorsubstrate. The semiconductor device 300 further includes an electrodestructure 312 formed in the contact trench 311. The electrode structure312 is in contact with the body region 301 at the bottom of the contacttrench 311 and in contact with the source region 305 at a sidewall ofthe contact trench 311.

Due to the contact trench extending in the semiconductor substrate andthe electrode structure being formed in the contact trench, latch-uprobustness in the semiconductor device may be improved as chalcogenatoms may be incorporated into a surface region of the source region andthe doping level of the source zone 305 may be reduced. Furthermore,both the source region and the body region may be contacted by the sameelectrode structure, resulting in a more efficient and simplersemiconductor device fabrication process, for example.

The source region 305 may build up or define at least a part of thesidewall of the contact trench 311. The body region may build up ordefine at least a part of a bottom of the contact trench 311.

The semiconductor device 300 may be similar to the semiconductor deviceformed according to the method described with respect to FIGS. 1A and 1Band similar to the semiconductor device described with respect to FIG.2. For example, the semiconductor device 300 may include one or more orall of the features already described with respect to the semiconductordevices of FIGS. 1 and 2.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 3may comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIG. 1 or 2) or below(e.g. FIG. 4).

FIG. 4 shows a plot 400 of injection electron current (A) 431 vs holecurrent (A) 432 and their dependence on different source dopingconcentration (e.g. compared with 100% of original source doping level433, reduced to 50% of the original source doping level 434, reduced to10% of the original source doping level 435 and reduced to 5% of theoriginal source doping level 436) with the same body dopingconcentration. The injection electron current may be reduced (e.g. from1 mA to 3×10⁻⁶ A) when the source doping is reduced by 50%, leading toan improvement in latch-up robustness, for example. A larger effect isexperienced at higher hole currents (e.g. about 1000 A). For example,the reduction in injection electron current resulting when the sourcedoping is reduced by 50% compared to the original source doping level ismuch greater at higher hole currents (e.g. about 1000 A) than at holecurrents between 100 A to 300 A.

A component simulation may show the influence of a reduction of thesource region doping concentration on the injection of electrons throughthe source region during the FET off-state. The electron current density(e-current) without reducing source doping (100%) and the electroncurrent density with source doping reduced by 50% may show that theelectron current density decreases significantly when the source dopingis reduced by 50%. Additionally, the emitter efficiency is reduced.Therefore, latch-up effects may be significantly reduced with lowersource doping made possible by the incorporation of atoms of the atleast one atom type in the source region resulting in a low contactresistance, for example. The doping concentration of the body doping isthe same in both cases (e.g. 100% and 50%), for example.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 4may comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1 to 3) or below(e.g. FIG. 4).

Aspects and features (e.g. the field effect transistor structure, thesource region, the surface region of the source region, thesemiconductor substrate, the oxide layer, the at least one atom type,the group of atom types, the body region, the drift region, the fieldstop region, the float region, the emitter region, the oxide layer, theinsulation structure, the gate electrode structure, the gate trench, thegate insulation layer, the source electrode, the drain electrode, thecontact trench, and the electrode structure) mentioned in connectionwith one or more specific examples may be combined with one or more ofthe other examples.

Various embodiments relate to a method for manufacturing an IGBT withimproved latch-up robustness and cosmic radiation robustness.

Various embodiments relate to improving latch-up robustness,over-current switching capability and cosmic radiation robustness inIGBTs. Doping adjustments may be carried out to adjust characteristicsof the doping regions of the transistor structures. The variousembodiments described herein may reduce or prevent the uncontrolledspreading of dopants in the semiconductor substrate which may negativelyinfluence the blocking capabilities of the transistor.

Various embodiments relate to improving cosmic radiation from CoolMOS™components.

Various embodiments relate to the introduction of selenium atoms in theside walls of the contact hole of IGBTs or Power MOSFETs and at the sametime a significant reduction of the source doping of the component.

Example embodiments may further provide a computer program having aprogram code for performing one of the above methods, when the computerprogram is executed on a computer or processor. A person of skill in theart would readily recognize that acts of various above-described methodsmay be performed by programmed computers. Herein, some exampleembodiments are also intended to cover program storage devices, e.g.,digital data storage media, which are machine or computer readable andencode machine-executable or computer-executable programs ofinstructions, wherein the instructions perform some or all of the actsof the above-described methods. The program storage devices may be,e.g., digital memories, magnetic storage media such as magnetic disksand magnetic tapes, hard drives, or optically readable digital datastorage media. Further example embodiments are also intended to covercomputers programmed to perform the acts of the above-described methodsor (field) programmable logic arrays ((F)PLAs) or (field) programmablegate arrays ((F)PGAs), programmed to perform the acts of theabove-described methods.

The description and drawings merely illustrate the principles of thedisclosure. It will thus be appreciated that those skilled in the artwill be able to devise various arrangements that, although notexplicitly described or shown herein, embody the principles of thedisclosure and are included within its spirit and scope. Furthermore,all examples recited herein are principally intended expressly to beonly for pedagogical purposes to aid the reader in understanding theprinciples of the disclosure and the concepts contributed by theinventor(s) to furthering the art, and are to be construed as beingwithout limitation to such specifically recited examples and conditions.Moreover, all statements herein reciting principles, aspects, andembodiments of the disclosure, as well as specific examples thereof, areintended to encompass equivalents thereof.

Functional blocks denoted as “means for . . . ” (performing a certainfunction) shall be understood as functional blocks comprising circuitrythat is configured to perform a certain function, respectively. Hence, a“means for s.th.” may as well be understood as a “means configured to orsuited for s.th.”. A means configured to perform a certain functiondoes, hence, not imply that such means necessarily is performing thefunction (at a given time instant).

Functions of various elements shown in the figures, including anyfunctional blocks labeled as “means”, “means for providing a sensorsignal”, “means for generating a transmit signal.”, etc., may beprovided through the use of dedicated hardware, such as “a signalprovider”, “a signal processing unit”, “a processor”, “a controller”,etc. as well as hardware capable of executing software in associationwith appropriate software. Moreover, any entity described herein as“means”, may correspond to or be implemented as “one or more modules”,“one or more devices”, “one or more units”, etc. When provided by aprocessor, the functions may be provided by a single dedicatedprocessor, by a single shared processor, or by a plurality of individualprocessors, some of which may be shared. Moreover, explicit use of theterm “processor” or “controller” should not be construed to referexclusively to hardware capable of executing software, and mayimplicitly include, without limitation, digital signal processor (DSP)hardware, network processor, application specific integrated circuit(ASIC), field programmable gate array (FPGA), read only memory (ROM) forstoring software, random access memory (RAM), and non-volatile storage.Other hardware, conventional and/or custom, may also be included.

It should be appreciated by those skilled in the art that any blockdiagrams herein represent conceptual views of illustrative circuitryembodying the principles of the disclosure. Similarly, it will beappreciated that any flow charts, flow diagrams, state transitiondiagrams, pseudo code, and the like represent various processes whichmay be substantially represented in computer readable medium and soexecuted by a computer or processor, whether or not such computer orprocessor is explicitly shown.

Furthermore, the following claims are hereby incorporated into theDetailed Description, where each claim may stand on its own as aseparate embodiment. While each claim may stand on its own as a separateembodiment, it is to be noted that—although a dependent claim may referin the claims to a specific combination with one or more otherclaims—other embodiments may also include a combination of the dependentclaim with the subject matter of each other dependent or independentclaim. Such combinations are proposed herein unless it is stated that aspecific combination is not intended. Furthermore, it is intended toinclude also features of a claim to any other independent claim even ifthis claim is not directly made dependent to the independent claim.

It is further to be noted that methods disclosed in the specification orin the claims may be implemented by a device having means for performingeach of the respective acts of these methods.

Further, it is to be understood that the disclosure of multiple acts orfunctions disclosed in the specification or claims may not be construedas to be within the specific order. Therefore, the disclosure ofmultiple acts or functions will not limit these to a particular orderunless such acts or functions are not interchangeable for technicalreasons. Furthermore, in some embodiments a single act may include ormay be broken into multiple sub acts. Such sub acts may be included andpart of the disclosure of this single act unless explicitly excluded.

What is claimed is:
 1. A semiconductor device, comprising: a body regionof a field effect transistor structure formed in a semiconductorsubstrate between a drift region of the field effect transistorstructure and a source region of the field effect transistor structure,wherein the semiconductor substrate comprises chalcogen atoms at an atomconcentration of less than 1×10¹³ cm⁻³ at a p-n junction between thebody region and the drift region, wherein at least part of the sourceregion comprises chalcogen atoms at an atom concentration of greaterthan 1×10¹⁴ cm⁻³.
 2. The semiconductor device of claim 1, wherein thesource region comprises chalcogen atoms at an atom concentration ofgreater than 1×10¹³ cm⁻³ at a surface region of the source region, andwherein the surface region has a thickness of less than 150 nm.
 3. Thesemiconductor device of claim 1, wherein the body region comprisesdopant atoms of a second dopant type at a doping concentration between1×10¹⁷ cm⁻³ and 5×10¹⁸ cm⁻³.
 4. The semiconductor device of claim 1,wherein the source region comprises electrically active dopant atoms ofa first dopant type at a doping concentration of less than 1×10¹⁹ cm⁻³.5. The semiconductor device of claim 4, wherein a ratio of the dopingconcentration of the chalcogen atoms in the source region to the dopingconcentration of the electrically active dopant atoms of the firstdopant type in the source region is between 1:10 and 1:2.
 6. Thesemiconductor device of claim 1, wherein the source region has aneffective doping concentration of not more than three times greater thanan effective doping concentration of the body region.
 7. Thesemiconductor device of claim 1, further comprising an electrodestructure forming an ohmic contact with the source region.
 8. Thesemiconductor device of claim 1, further comprising a gate trenchadjacent to the source region and the body region.
 9. The semiconductordevice of claim 1, wherein the chalcogen atoms in the source region andat the p-n junction between the body region and the drift region areselenium atoms.
 10. The semiconductor device of claim 1, wherein thesemiconductor substrate is a silicon-based semiconductor substrate. 11.A semiconductor device, comprising: a body region of a field effecttransistor structure formed in a semiconductor substrate and a sourceregion formed adjacent to the body region, at least part of the sourceregion comprising chalcogen atoms at an atom concentration of greaterthan 1×10¹³ cm⁻³; a contact trench extending into the semiconductorsubstrate; and an electrode structure formed in the contact trench,wherein the electrode structure is in contact with the body region atthe bottom of the contact trench and in contact with the source regionat a sidewall of the contact trench.
 12. The semiconductor device ofclaim 11, wherein the contact trench extends through the source regionand defines a side face of the source region, and wherein the side faceof the source region forms part of a sidewall of the contact trench. 13.The semiconductor device of claim 11, wherein a surface of the bodyregion forms at least a part of a bottom of the contact trench.
 14. Thesemiconductor device of claim 11, wherein the source region compriseschalcogen atoms at an atom concentration of greater than 1×10¹³ cm⁻³ ata surface region of the source region, and wherein the surface regionhas a thickness of less than 150 nm.
 15. The semiconductor device ofclaim 11, wherein the body region comprises dopant atoms of a seconddopant type at a doping concentration between 1×10¹⁷ cm⁻³ and 5×10¹⁸cm⁻³.
 16. The semiconductor device of claim 11, wherein the sourceregion comprises electrically active dopant atoms of a first dopant typeat a doping concentration of less than 1×10¹⁹ cm⁻³.
 17. Thesemiconductor device of claim 16, wherein a ratio of the dopingconcentration of the chalcogen atoms in the source region to the dopingconcentration of the electrically active dopant atoms of the firstdopant type in the source region is between 1:10 and 1:2.
 18. Thesemiconductor device of claim 11, further comprising a gate trenchadjacent to the source region and the body region.
 19. The semiconductordevice of claim 11, wherein the chalcogen atoms in the source region areselenium atoms.
 20. The semiconductor device of claim 11, wherein thesemiconductor substrate is a silicon-based semiconductor substrate.